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Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

机译：由二元过渡金属氧化物组成的电阻式随机存取存储器中的灯丝分布与电阻切换特性之间的相关性

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Hayato Tanaka; Kentaro Kinoshita; Masataka Yoshihara; Satoru Kishida;
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年度 2012
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1. Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides [J] . Hayato Tanaka, Kentaro Kinoshita, Masataka Yoshihara, AIP Advances . 2012,第2期

机译：由二元过渡金属氧化物组成的电阻式随机存取存储器中灯丝分布与电阻切换特性之间的相关性
2. Insight into distribution and switching of resistive random-access memory filaments based on analysis of variations in memory characteristics [J] . Kentaro Kinoshita, HayatoTanaka, Masataka Yoshihara, Journal of Applied Physics . 2012,第4期

机译：通过分析存储器特性的变化，了解电阻随机存取存储器细丝的分布和切换
3. Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application [J] . Sreedevi Vallabhapurapu, L. D. Varma Sangani, M. Ghanashyam Krishna, Journal of materials science . 2021,第3期

机译：壳聚糖 - 铝掺杂氧化锌复合薄膜的光学和电阻切换性能，用于透明电阻随机存取存储器应用
4. Correlation between Filament Distribution and Resistive Switching Property in Binary-Transition-Metal-Oxide Based Resistive Random Access Memory. [C] . H. Tanaka, K. Kinoshita, M. Yoshihara, MRS meeting . 2012

机译：二进制转换 - 金属氧化物电阻随机存取存储器灯丝分布与电阻切换性能的相关性。
5. Resistive Switching Random Access Memory (RRAM): Analysis, Modeling, and Characterization Toward Practical Applications [D] . Jiang, Zizhen. 2020

机译：电阻切换随机存取存储器（RRAM）：对实际应用的分析，建模和表征
6. Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory [O] . Yunfeng Lai, Wenbiao Qiu, Zecun Zeng, 2016

机译：等离子体处理的氧化锌纳米线的电阻转换用于电阻随机存取存储器
7. Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides [O] . Hayato Tanaka, Kentaro Kinoshita, Masataka Yoshihara, 2012

机译：由二元过渡金属氧化物组成的电阻随机存取存储器中灯丝分布与电阻转换特性的相关性
8. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. [R] . Chin, M. L., Amani, M., O'Regan, T. P., 2015

机译：原子层沉积（aLD） - 沉积二氧化钛（TiO2）厚度对Zr40Cu35al15Ni10（ZCaN）/ TiO2 /铟（In）基电阻随机存取存储器（RRam）结构性能的影响。

Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

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